THE GETTERING OF COPPER BY KEV IMPLANTATION OF GERMANIUM INTO SILICON

The gettering of copper by keV implantation of germanium into silicon is investigated. Germanium is implanted at a fixed energy with varying doses into the front side of silicon samples. Copper is thermally evaporated on the backside of the samples and then annealed at 900 degrees C for 1 h and 10 h, respectively, to allow in-diffusion of the transition metal. Rutherford backscattering spectroscopy secondary-ion-mass spectroscopy, and cross-section transmission electron microscopy are used to demonstrate that gettering of copper is achieved through stacking faults created by heavy dose germanium implantation and solid-phase epitaxy. (C) 1995 American Institute of Physics.