SPUTTER ETCHING EFFECTS ON GAAS SCHOTTKY JUNCTIONS

被引：32

作者：

YAMASAKI, K

ASAI, K

SHIMADA, K

MAKIMURA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 12期

关键词：

D O I：

10.1149/1.2123674

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2760 / 2764

页数：5

共 12 条

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