AN ANALYTICAL TWO-DIMENSIONAL MODEL FOR SILICON MESFETS

被引：42

作者：

MARSHALL, JD ^{[1
]}

MEINDL, JD ^{[1
]}

机构：

[1] STANFORD UNIV,SCH ENGN,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 03期

关键词：

D O I：

10.1109/16.2464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：373 / 383

页数：11

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[8]

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[9]

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[10]

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