GAAS(110)-AL INTERFACES FORMED AT LOW-TEMPERATURE

被引：2

作者：

BONAPACE, CR

LI, K

KAHN, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572446

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：566 / 567

页数：2

共 9 条

[1]

BONAPACE CR, 1983, P INT C DYNAMICS INT

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MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[3] ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL [J].

DUKE, CB ;

PATON, A ;

MEYER, RJ ;

BRILLSON, LJ ;

KAHN, A ;

KANANI, D ;

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YEH, JL ;

MARGARITONDO, G ;

KATNANI, AD .

PHYSICAL REVIEW LETTERS, 1981, 46 (06) :440-443

[4] STRUCTURAL ENERGIES OF AL DEPOSITED ON THE GAAS(110) SURFACE [J].

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PHYSICAL REVIEW LETTERS, 1981, 47 (09) :679-682

[5] 1ST-PRINCIPLES DETERMINATION OF THE STRUCTURE OF THE AL/GAAS (110) SURFACE [J].

IHM, J ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :340-343

[6] ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS [J].

KAHN, A ;

CARELLI, J ;

KANANI, D ;

DUKE, CB ;

PATON, A ;

BRILLSON, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :331-334

[7] ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES [J].

KAHN, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :684-691

[8]

PAULING L, 1973, NATURE CHEM BOND

[9] PHOTOEMISSION-STUDY OF THE INTERACTION OF A1 WITH A GAAS (110) SURFACE [J].

SKEATH, P ;

LINDAU, I ;

PIANETTA, P ;

CHYE, PW ;

SU, CY ;

SPICER, WE .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1979, 17 (04) :259-265

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