CRYSTALLOGRAPHIC ETCHING PHENOMENON DURING PLASMA-ETCHING OF SIC(100) THIN-FILMS IN SF6

被引：11

作者：

PALMOUR, JW

WILLIAMS, BE

ASTELLBURT, P

DAVIS, RF

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

[2] PLASMA TECHNOL LTD, BRISTOL BS19 4AP, ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 02期

关键词：

D O I：

10.1149/1.2096660

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：491 / 495

页数：5

共 17 条

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