MASS-SPECTROMETRIC TRANSIENT STUDY OF DC PLASMA-ETCHING OF SI IN SF6/O-2 MIXTURES

被引：13

作者：

BRANDT, WW ^{[1
]}

HONDA, T ^{[1
]}

机构：

[1] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1595 / 1601

页数：7

共 33 条

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[19] MASS-SPECTROMETRIC TRANSIENT STUDY OF DC PLASMA-ETCHING OF SI IN NF3 AND NF3/O2 MIXTURES [J].

HONDA, T ;

BRANDT, WW .

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[20] NON-THERMAL EFFECTS IN LASER-ENHANCED ETCHING OF SILICON BY XEF2 [J].

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