STRUCTURAL CHARACTERIZATION OF GALLIUM-ARSENIDE EPITAXIAL LAYERS GROWN ON SI(001)

被引：8

作者：

ALBERTS, V

NEETHLING, JH

VERMAAK, JS

机构：

[1] Department of Physics, University of Port Elizabeth, Port Elizabeth, 6000

来源：

MATERIALS LETTERS | 1992年 / 13卷 / 2-3期

关键词：

D O I：

10.1016/0167-577X(92)90111-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nucleation and growth of undoped gallium arsenide (GaAs) epitaxial layers, grown by metallo-organic vapour-phase epitaxy (MOVPE) on Si(001) substrates, were investigated by transmission electron microscopy (TEM). The influence of growth time and thermal annealing on the initial stages of growth was mainly considered. TEM studies indicated that GaAs nucleates in the form of three-dimensional epitaxial islands on Si(001) and eventually coalesced into a continuous film as growth proceeds. Dark-field TEM studies showed that high densities of primary and tertiary twins are present in the epitaxial (001) GaAs buffer layers. These microtwins, present in the epitaxial buffer layers, are able to extend to the top surface of the subsequently grown layers and were found to be the main reason for the degradation in the surface morphology of GaAs-on-Si layers.

引用

页码：65 / 79

页数：15

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