SOLID-PHASE EPITAXIAL REGROWTH OF SB-IMPLANTED SI1-XGEX STRAINED LAYERS - KINETICS AND ELECTRICAL-PROPERTIES

被引:5
作者
ATZMON, Z
EIZENBERG, M
SHACHAMDIAMAND, Y
MAYER, JW
SCHAFFLER, F
机构
[1] TECHNION ISRAEL INST TECHNOL,DEPT MAT ENGN,IL-32000 HAIFA,ISRAEL
[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
[3] CORNELL UNIV,ITHACA,NY 14853
[4] DAIMLER BENZ AG,ULM RES CTR,W-7900 ULM,GERMANY
关键词
D O I
10.1063/1.356013
中图分类号
O59 [应用物理学];
学科分类号
摘要
Kinetics and electrical properties of solid-phase epitaxial regrown (SPEG) layers of Sb-implanted strained Si1-xGex alloys are reported. Two sets of Si1-xGex epilayers with compositions of x=0.08 and 0.18, molecular beam epitaxy grown on Si(100) substrates, were implanted at room temperature with Sb+ ions at an energy of 200 and 100 keV, respectively, and doses of 10(14) and 10(15) ions/cm2. A set of Si(100) samples was also implanted as a reference. The samples were annealed at temperatures of 525, 550, and 575-degrees-C for durations between 5 s and 10 min. For the higher-dose Sb-implanted Si0.92Ge0.08 layer (10(15) cm-2) ion backscattering measurements in the channeling mode show a decrease in the regrowth rate compared to Sb-implanted Si(100). The activation energy of the SPEG process for the Si0.92Ge0.08 alloy was 2.9+/-0.2 eV, higher than the value of 2.4+/-0.2 eV obtained for pure Si. For the alloy with 18% Ge the SPEG rate for the 10(15) cm-2 dose was much smaller compared to the sample with 8% Ge. For the lower-dose implantation (10(14) cm-2) the regrowth rates for Si0.92Ge0.08 and pure Si were very close, and the activation energies were 2.8+/-0.2 and 2.7+/-0.2, respectively. It was also found that the SPEG mte in a rapid thermal annealing was significantly higher than that for a sample heated in a conventional furnace.
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页码:3936 / 3943
页数:8
相关论文
共 24 条
[1]   EPITAXIAL REGROWTH OF SB IMPLANTED SI1-XGEX ALLOY LAYERS [J].
ATZMON, Z ;
EIZENBERG, M ;
REVESZ, P ;
MAYER, JW ;
HONG, SQ ;
SCHAFFLER, F .
APPLIED PHYSICS LETTERS, 1992, 60 (18) :2243-2245
[2]   ELECTRICAL-PROPERTIES OF SB IMPLANTED SI1-XGEX ALLOY LAYERS [J].
ATZMON, Z ;
EIZENBERG, M ;
SHACHAMDIAMAND, Y ;
MAYER, JW ;
SCHAFFLER, F .
APPLIED PHYSICS LETTERS, 1992, 61 (24) :2902-2904
[3]   THE ACTIVATION STRAIN TENSOR - NONHYDROSTATIC STRESS EFFECTS ON CRYSTAL-GROWTH KINETICS [J].
AZIZ, MJ ;
SABIN, PC ;
LU, GQ .
PHYSICAL REVIEW B, 1991, 44 (18) :9812-9816
[4]   SOLID-PHASE EPITAXIAL REGROWTH OF SI1-XGEX/SI STRAINED-LAYER STRUCTURES AMORPHIZED BY ION-IMPLANTATION [J].
CHILTON, BT ;
ROBINSON, BJ ;
THOMPSON, DA ;
JACKMAN, TE ;
BARIBEAU, JM .
APPLIED PHYSICS LETTERS, 1989, 54 (01) :42-44
[5]   REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].
CSEPREGI, L ;
KENNEDY, EF ;
GALLAGHER, TJ ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240
[6]   REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].
CSEPREGI, L ;
MAYER, JW ;
SIGMON, TW .
APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93
[7]  
Ehrstein J. R., 1987, STP ASTM, V960, P453
[8]   91 GHZ SIGE HBTS GROWN BY MBE [J].
GRUHLE, A ;
KIBBEL, H ;
ERBEN, U ;
KASPER, E .
ELECTRONICS LETTERS, 1993, 29 (04) :415-417
[9]   SOLID-PHASE EPITAXY OF STRESSED AND STRESS-RELAXED GE-SI ALLOYS [J].
HONG, QZ ;
ZHU, JG ;
MAYER, JW ;
XIA, W ;
LAU, SS .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) :1768-1773
[10]   REGROWTH RATES AND DOPANT ACTIVATION OF SB+-IMPLANTED SI-GE ALLOYS [J].
HONG, SQ ;
HONG, QZ ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) :3821-3823