TWO-DIMENSIONAL NUMERICAL MODELING OF HEMT USING AN ENERGY-TRANSPORT MODEL

被引：4

作者：

BUOT, FA ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1987年 / 6卷 / 01期

关键词：

D O I：

10.1108/eb010300

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

引用

页码：45 / 52

页数：8

共 14 条

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[3] A MECHANISM FOR RADIATION-INDUCED DEGRADATION IN GAAS FIELD-EFFECT TRANSISTORS [J].

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[7]

Linh N. T., 1984, Physics of Submicron Structures. Proceedings of a Workshop, P53

[8] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

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[9] 94-GHZ TRANSISTOR AMPLIFICATION USING AN HEMT [J].

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[10]

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