GROWTH AND CHARACTERIZATION OF SI-DOPED VAPOR-PHASE EPITAXIAL GAAS FOR MESFET

被引：2

作者：

FENG, M ^{[1
]}

EU, VK ^{[1
]}

ZIELINSKI, T ^{[1
]}

WHELAN, JM ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90009

来源：

关键词：

D O I：

10.1007/BF02672390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：663 / 688

页数：26

共 18 条

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DILORENZO, JV
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +
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[8] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH
KNIGHT, JR
EFFER, D
EVANS, PR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &
[9] ROLE OF SILICON DURING GROWTH OF VPE GAAS-LAYERS
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[10] LEWIS, THERMODYNAMICS