SIMULATION OF 3-DIMENSIONAL ION-IMPLANTATION DISTRIBUTIONS

被引：3

作者：

ASHWORTH, DG

MOULAVIKAKHKI, M

OYEN, R

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 26期

关键词：

D O I：

10.1088/0022-3719/18/26/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5043 / 5054

页数：12

共 12 条

[1]

ASHWORTH DG, 1984, J PHYS C SOLID STATE, V17, P2449, DOI 10.1088/0022-3719/17/14/004

[2]

ASHWORTH DG, 1983, J APPL PHYS, V55, P586

[3] AN APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION TO ION RANGE AND DAMAGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J].

CHRISTEL, LA ;

GIBBONS, JF ;

MYLROIE, S .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6176-6182

[4] RANGE DISTRIBUTION THEORY BASED ON ENERGY-DISTRIBUTION OF IMPLANTED IONS [J].

FURUKAWA, S ;

ISHIWARA, H .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1268-&

[5] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].

FURUKAWA, S ;

ISHIWARA, H ;

MATSUMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) :134-+

[6] A MULTIPLE PASS APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION FOR CALCULATING ION-IMPLANTATION PROFILES AT LOW ENERGIES [J].

GILES, MD ;

GIBBONS, JF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :33-36

[7]

LINDHARD J, 1963, K DANSKE VIDENSK SEL, V33

[8] 3-DIMENSIONAL MONTE-CARLO SIMULATIONS .1. IMPLANTED PROFILES FOR DOPANTS IN SUB-MICRON DEVICE [J].

MAZZONE, AM ;

ROCCA, G .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1984, 3 (01) :64-71

[9]

MOORE WJ, 1972, PHYSICAL CHEM, P133

[10] CALCULATION OF PROJECTED RANGE DISTRIBUTIONS OF IMPLANTED IONS IN MULTILAYER MULTI-ELEMENT SUBSTRATES [J].

MOULAVIKAKHKI, M ;

ASHWORTH, DG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (06) :1135-1147

← 1 2 →