ELECTROMIGRATION-INDUCED SHORT-CIRCUIT FAILURE IN ALUMINUM UNDERLAID WITH CHEMICALLY VAPOR-DEPOSITED TUNGSTEN

被引：5

作者：

BROADBENT, EK

TOWNER, JM

TOWSEND, PH

VANDERPLAS, HA

机构：

[1] STANFORD UNIV,DEPT MAT SCI,STANFORD,CA 94305

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 06期

关键词：

D O I：

10.1063/1.339893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1917 / 1923

页数：7

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