MODEL FOR THICKNESS DEPENDENCE OF RADIATION CHARGING IN MOS STRUCTURES

被引：37

作者：

VISWANATHAN, CR

MASERJIAN, J

机构：

[1] UNIV CALIF LOS ANGELES,LOS ANGELES,CA 90024

[2] CALTECH,JET PROP LAB,PASADENA,CA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1540 / 1545

页数：6

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[9] VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2 [J].

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[10] STATIC TECHNIQUE FOR PRECISE MEASUREMENTS OF SURFACE-POTENTIAL AND INTERFACE STATE DENSITY IN MOS STRUCTURES [J].

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