DIFFERENT FERMI-LEVEL PINNING POSITIONS BETWEEN EPITAXIAL AND ROTATIONAL AL/SI INTERFACES

被引：13

作者：

MIURA, Y

FUJIEDA, S

HIROSE, K

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.50.4893

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Schottky-barrier height (SBH) for intimate Al/Si contacts is investigated in relation to the interfacial crystallographic alignment, which is observed by transmission-electron microscopy. Epitaxial and rotational Al films are obtained by low-temperature molecular-beam epitaxy on both Si(lll) and (100) surfaces, by controlling the surface structures. The SBH measurements for n- and p-type samples reveal that the absence of epitaxial alignment at the interfaces significantly lowers the Fermi-level pinning position for the contacts on both (111) and (100) surfaces.

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页码：4893 / 4896

页数：4

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