LASER-INDUCED PHOTOCHEMICAL ETCHING OF SIO2 STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：27

作者：

YOKOYAMA, S

YAMAKAGE, Y

HIROSE, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.96176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：389 / 391

页数：3

共 9 条

[1] XPS AND UPS STUDIES OF INTERACTION OF NITROGEN-CONTAINING MOLECULES WITH NICKEL - USE OF BINDING-ENERGY PATTERNS AND RELATIVE INTENSITIES TO DIAGNOSE SURFACE SPECIES [J].

BRUNDLE, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :301-309

[2] CHEMICAL VAPOR-DEPOSITION OF SILICON USING A CO2-LASER [J].

CHRISTENSEN, CP ;

LAKIN, KM .

APPLIED PHYSICS LETTERS, 1978, 32 (04) :254-256

[3] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J].

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2614-2619

[4] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J].

HEINECKE, RAH .

SOLID-STATE ELECTRONICS, 1975, 18 (12) :1146-1147

[5] LASER-INDUCED CHEMICAL ETCHING OF METALS AND SEMICONDUCTORS [J].

HOULE, FA ;

CHUANG, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :790-791

[6]

NAKAYAMA S, 1980, 2ND P S DRY PROC TOK, P115

[7] X-RAY PHOTOELECTRON-SPECTROSCOPY OF SIO2-SI INTERFACIAL REGIONS - ULTRATHIN OXIDE-FILMS [J].

RAIDER, SI ;

FLITSCH, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) :294-303

[8] SURFACE ETCHING BY LASER-GENERATED FREE-RADICALS [J].

STEINFELD, JI ;

ANDERSON, TG ;

REISER, C ;

DENISON, DR ;

HARTSOUGH, LD ;

HOLLAHAN, JR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :514-515

[9]

YOKOYAMA S, 1984, 16TH C SOL STAT DEV, P451

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