LASER-INDUCED CHEMICAL ETCHING OF METALS AND SEMICONDUCTORS

被引：8

作者：

HOULE, FA

CHUANG, TJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：790 / 791

页数：2

共 8 条

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[4] INFRARED-LASER RADIATION EFFECTS ON XEF2 INTERACTION WITH SILICON [J].

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[5] INFRARED-LASER INDUCED REACTIONS AT METAL AND SEMICONDUCTOR SURFACES [J].

CHUANG, TJ .

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[6] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :698-700

[7] LASER MICROPHOTOCHEMISTRY FOR USE IN SOLID-STATE ELECTRONICS [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (11) :1233-1243

[8] SURFACE ETCHING BY LASER-GENERATED FREE-RADICALS [J].

STEINFELD, JI ;

ANDERSON, TG ;

REISER, C ;

DENISON, DR ;

HARTSOUGH, LD ;

HOLLAHAN, JR .

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