A KINETIC-STUDY OF THE PLASMA-ETCHING PROCESS .1. A MODEL FOR THE ETCHING OF SI AND SIO2 IN CNFM/H2 AND CNFM/O2 PLASMAS

被引：139

作者：

KUSHNER, MJ ^{[1
]}

机构：

[1] SANDIA NATL LABS, DIV 4216, ALBUQUERQUE, NM 87185 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.331074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2923 / 2938

页数：16

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