COMPENSATION IN GAAS CRYSTALS DUE TO ANTI-STRUCTURE DISORDER

被引:27
作者
FIGIELSKI, T
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 35卷 / 04期
关键词
D O I
10.1007/BF00617176
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:255 / 261
页数:7
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共 26 条
[11]   INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].
KAMINSKA, M ;
SKOWRONSKI, M ;
LAGOWSKI, J ;
PARSEY, JM ;
GATOS, HC .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304
[12]   TECHNOLOGICAL AND PHYSICAL ASPECTS OF THE MAIN EL2 DEFECT IN GAAS [J].
KAMINSKA, M ;
SKOWRONSKI, M ;
KUSZKO, W ;
LAGOWSKI, J ;
PARSEY, J ;
GATOS, HC .
CZECHOSLOVAK JOURNAL OF PHYSICS, 1984, 34 (05) :409-414
[13]  
Kroger F A., 1964, CHEM IMPERFECT CRYST
[14]   ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].
LAGOWSKI, J ;
GATOS, HC ;
PARSEY, JM ;
WADA, K ;
KAMINSKA, M ;
WALUKIEWICZ, W .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344
[15]  
LANNOO M, 1981, SPRINGER SER SOLID S, V22
[16]   THEORETICAL-STUDY OF NATIVE DEFECTS IN III-V SEMICONDUCTORS [J].
LINCHUNG, PJ ;
REINECKE, TL .
PHYSICAL REVIEW B, 1983, 27 (02) :1101-1114
[17]   PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS [J].
THURMOND, CD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (05) :785-&
[18]   SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].
VANVECHTEN, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :423-429
[19]   SUBMILLIMETER ELECTRON-PARAMAGNETIC-RES EVIDENCE FOR THE ARSENIC ANTISITE DEFECT IN GAAS [J].
WAGNER, RJ ;
KREBS, JJ ;
STAUSS, GH ;
WHITE, AM .
SOLID STATE COMMUNICATIONS, 1980, 36 (01) :15-17
[20]   SHALLOW DONOR ASSOCIATED WITH THE MAIN ELECTRON TRAP (EL2) IN MELT-GROWN GAAS [J].
WALUKIEWICZ, W ;
LAGOWSKI, J ;
GATOS, HC .
APPLIED PHYSICS LETTERS, 1983, 43 (01) :112-114