ANNEALING OF ZINC-IMPLANTED GAAS

被引：25

作者：

BARRETT, NJ ^{[1
]}

GRANGE, JD ^{[1
]}

SEALY, BJ ^{[1
]}

STEPHENS, KG ^{[1
]}

机构：

[1] UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.334823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5470 / 5476

页数：7

共 52 条

[31] THE ELECTRICAL-PROPERTIES OF ZINC IMPLANTED GAAS [J].

KULAR, SS ;

SEALY, BJ ;

ONO, Y ;

STEPHENS, KG .

SOLID-STATE ELECTRONICS, 1984, 27 (01) :83-88

[32] ELECTRICAL PROFILES FROM ZINC IMPLANTED GAAS [J].

KULAR, SS ;

SEALY, BJ ;

STEPHENS, KG .

ELECTRONICS LETTERS, 1978, 14 (01) :2-4

[33] STUDY ON ZN DIFFUSION IN GAAS AND ALXGA1-XAS(X LESS-THAN-OR-EQUAL-TO 0.4) AT TEMPERATURES FROM 726-DEGREES-C TO 566-DEGREES-C [J].

MATSUMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05) :829-835

[34] SELF-DIFFUSION IN GALLIUM-ARSENIDE [J].

PALFREY, HD ;

BROWN, M ;

WILLOUGHBY, AFW .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) :863-877

[35] DISLOCATION CLIMB MODEL IN COMPOUND SEMICONDUCTORS WITH ZINC BLENDE STRUCTURE [J].

PETROFF, PM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1976, 29 (08) :461-463

[36] COEFFICIENT OF EXPANSION OF GAAS GAP AND GA(AS P) COMPOUNDS FROM -62 DEGREES TO 200 DEGREES C [J].

PIERRON, ED ;

PARKER, DL ;

MCNEELY, JB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4669-&

[37] EFFECTS OF VACUUM ANNEALING ON THE ELECTRONIC-PROPERTIES OF CLEAVED GAAS [J].

PROIX, F ;

AKREMI, A ;

ZHONG, ZT .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (28) :5449-5463

[38] MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF DUAL IMPLANTS IN GAAS [J].

SHAHID, MA ;

MOFFATT, S ;

BARRETT, NJ ;

SEALY, BJ ;

PUTTICK, KE .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 70 (1-4) :291-299

[39] THERMAL-EXPANSION OF SOME DIAMOND-LIKE CRYSTALS [J].

SLACK, GA ;

BARTRAM, SF .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :89-98

[40] LOW CONTACT RESISTANCE NON-ALLOYED OHMIC CONTACTS TO ZN-IMPLANTED P+ GAAS [J].

SU, CY ;

STOLTE, C .

ELECTRONICS LETTERS, 1983, 19 (21) :891-892

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