EXTREMELY LOW SPECIFIC CONTACT RESISTIVITIES FOR P-TYPE GASB, GROWN BY MOLECULAR-BEAM EPITAXY

被引：18

作者：

TADAYON, B

KYONO, CS

FATEMI, M

TADAYON, S

MITTEREDER, JA

机构：

[1] Naval Research Lab, Washington

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.587979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated different metal contacts (Cr/Au, Ti/Pt/Au, and Au) on p-type GaSb, grown by the molecular beam epitaxy. For Au contacts, specific contact resistivities in the range of 1.4 × 10-8 -7.8 × 10-8 Ω cm2 have been obtained. These are the lowest values ever reported for p-type GaSb. A simple procedure for surface preparation is also reported.

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页码：1 / 3

页数：3

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