IMPURITY-TO-BAND TUNNELING IN SEMICONDUCTORS

被引：8

作者：

CHAUDHURI, S ^{[1
]}

COON, DD ^{[1
]}

KARUNASIRI, RPG ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT PHYS,PITTSBURGH,PA 15260

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5476 / 5478

页数：3

共 20 条

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[6] OPTICAL-TRANSITION CROSS-SECTIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J].

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PHYSICAL REVIEW B, 1982, 26 (12) :6593-6602

[7] QUANTUM-MECHANICAL ESTIMATES OF THE SPEED OF FIELD-IONIZATION OF SHALLOW IMPURITY LEVELS [J].

CHAUDHURI, S ;

COON, DD ;

DERKITS, GE .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :111-113

[8] RATE OF FIELD-IONIZATION FROM S-STATES WITH A QUANTUM DEFECT [J].

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[9]

CHAUDHURI S, 1981, B AM PHYS SOC, V26, P783

[10]

DEMKOV YN, 1964, ZH EKSP TEOR FIZ, V47, P918

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