IR AND RBS SPECTROSCOPY INVESTIGATION OF SEMI-INSULATING PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON LAYERS

被引：3

作者：

ANDRA, W

GOTZ, G

HOBERT, H

MISYUCHENKO, V

SAMUILOV, VA

STELMAKH, V

机构：

[1] FRIEDRICH SCHILLER UNIV,SEKT CHEM,DDR-6900 JENA,GER DEM REP

[2] ACAD SCI BESSR,DEPT PHYS,MINSK 220080,BELORUSSIA,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 110卷 / 01期

关键词：

D O I：

10.1002/pssa.2211100117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：181 / 187

页数：7

共 8 条

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[2]

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[3] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].

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[4]

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[5] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].

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SARASWAT, KC ;

HELMS, CR ;

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5755-5763

[6] SILICON HETEROJUNCTION TRANSISTOR [J].

MATSUSHITA, T ;

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APPLIED PHYSICS LETTERS, 1979, 35 (07) :549-550

[7] DENSIFICATION OF SIPOS [J].

MAXWELL, HR ;

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[8]

SAKHAROV YG, 1984, ELEKTRONNAYA TEKH M, V3, P22

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