ELECTRICAL-PROPERTIES OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS CONTAMINATED WITH OXYGEN

被引：2

作者：

ANGELUCCI, R ^{[1
]}

SEVERI, M ^{[1
]}

SOLMI, S ^{[1
]}

BALDI, L ^{[1
]}

机构：

[1] SGS ATES,MILAN,ITALY

来源：

THIN SOLID FILMS | 1983年 / 103卷 / 03期

关键词：

D O I：

10.1016/0040-6090(83)90444-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：275 / 281

页数：7

共 16 条

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