SOLID-STATE REACTION OF MO ON CUBIC AND HEXAGONAL SIC

被引：19

作者：

HARA, S

SUZUKI, K

FURUYA, A

MATSUI, Y

UENO, T

OHDOMARI, I

MISAWA, S

SAKUMA, E

YOSHIDA, S

UEDA, Y

SUZUKI, S

机构：

[1] ADV MAT LAB INC,SOKA,SAITAMA 340,JAPAN

[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 03期

关键词：

AES; Carbide; Molybdenum; RBS; Silicide; Silicon carbide; TEM; XRD; α-SiC; β-SiC;

D O I：

10.1143/JJAP.29.L394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mo/3C-SiC and Mo/6H-SiC interfaces have been investigated by Auger electron spectroscopy, Rutherford backscattering spectroscopy, X-ray diffraction, and transmission electron microscopy. High temperature annealing at 1200°C for 1 hour caused a reaction at the interfaces, resulting in forming a Mo2C/Mo5Si3/SiC multilayer. We have found that SiC poly-typism (3C or 6H) and Mo deposition process (evaporation or sputter deposition) make no influence in forming the multilayer. The diffusion mechanism at the Mo/SiC interface will be discussed. © 1990 The Japan Society of Applied Physics.

引用

页码：L394 / L397

页数：4

共 16 条

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].