A 3.8 MU-M PERIOD SAWTOOTH GRATING IN INP BY ANISOTROPIC ETCHING

被引：8

作者：

KEAVNEY, CJ ^{[1
]}

SMITH, HI ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 02期

关键词：

D O I：

10.1149/1.2115604

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：452 / 453

页数：2

共 8 条

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ADACHI, S ;

KAWAGUCHI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1342-1349

[2] SILICON MICROMECHANICAL DEVICES [J].

ANGELL, JB ;

TERRY, SC ;

BARTH, PW .

SCIENTIFIC AMERICAN, 1983, 248 (04) :44-&

[3] ANISOTROPIC ETCHING OF SILICON [J].

BEAN, KE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1185-1193

[4] X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES [J].

FLANDERS, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1615-1619

[5] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].

GATOS, HC ;

LAVINE, MC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433

[6] VERTICAL ETCHING OF SILICON AT VERY HIGH ASPECT RATIOS [J].

KENDALL, DL .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1979, 9 :373-403

[7] FABRICATION OF X-RAY MASKS USING ANISOTROPIC ETCHING OF (110) SI AND SHADOWING TECHNIQUES [J].

TSUMITA, N ;

MELNGAILIS, J ;

HAWRYLUK, AM ;

SMITH, HI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1211-1213

[8] CHEMICAL ETCHING OF [111] AND [100] SURFACES OF INP [J].

TUCK, B ;

BAKER, AJ .

JOURNAL OF MATERIALS SCIENCE, 1973, 8 (11) :1559-1566

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