INVESTIGATION OF BULK ELECTRON TRAPS CREATED BY FAST-NEUTRON IRRADIATION IN A BURIED N-CHANNEL CCD

[1] CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J]. PHYSICAL REVIEW, 1968, 171 (03): : 856 - +

[2] ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3776 - 3780

[3] NEUTRON PRODUCED TRAPPING CENTERS IN JUNCTION FIELD EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 50 - +

[4] TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (09): : 1328 - +

[5] Mohsen A. M., 1974, IEEE Transactions on Electron Devices, VED-21, P701, DOI 10.1109/T-ED.1974.17997

[6] RADIATION PRODUCED TRAPPING EFFECTS IN DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 347 - 354

[7] PARILLO LC, 1972, APPL PHYS LETT, V20, P104

[8] SAKS NS, 1976, DEC P NASA JPL C CCD

[9] INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN N- AND P-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2890 - +

[10] ENERGY DEPENDENCE OF NEUTRON DAMAGE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 204 - +

[1] CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J]. PHYSICAL REVIEW, 1968, 171 (03): : 856 - +

[2] ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3776 - 3780

[3] NEUTRON PRODUCED TRAPPING CENTERS IN JUNCTION FIELD EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 50 - +

[4] TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (09): : 1328 - +

[5] Mohsen A. M., 1974, IEEE Transactions on Electron Devices, VED-21, P701, DOI 10.1109/T-ED.1974.17997

[6] RADIATION PRODUCED TRAPPING EFFECTS IN DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 347 - 354

[7] PARILLO LC, 1972, APPL PHYS LETT, V20, P104

[8] SAKS NS, 1976, DEC P NASA JPL C CCD

[9] INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN N- AND P-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2890 - +

[10] ENERGY DEPENDENCE OF NEUTRON DAMAGE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 204 - +