EFFECTS AND BEHAVIOR OF ARSENIC DURING TITANIUM SILICIDATION BY HALOGEN LAMP ANNEALING

被引:3
作者
OKAMOTO, T
TSUKAMOTO, K
SHIMIZU, M
MATSUKAWA, T
机构
关键词
D O I
10.1063/1.338960
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4530 / 4534
页数:5
相关论文
共 22 条
[1]   DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].
ALPERIN, ME ;
HOLLAWAY, TC ;
HAKEN, RA ;
GOSMEYER, CD ;
KARNAUGH, RV ;
PARMANTIE, WD .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :61-69
[2]   SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING [J].
BRAT, T ;
OSBURN, CM ;
FINSTAD, T ;
LIU, J ;
ELLINGTON, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) :1451-1458
[3]   PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].
CANALI, C ;
CATELLANI, C ;
PRUDENZIATI, M ;
WADLIN, WH ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45
[4]   PHASE-DIAGRAMS AND METAL-RICH SILICIDE FORMATION [J].
CANALI, C ;
MAJNI, G ;
OTTAVIANI, G ;
CELOTTI, G .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :255-258
[5]   TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON [J].
CHOW, TP ;
KATZ, W ;
SMITH, G .
APPLIED PHYSICS LETTERS, 1985, 46 (01) :41-43
[6]   TITANIUM SILICIDE FORMATION ON BORON-IMPLANTED SILICON [J].
CHOW, TP ;
KATZ, W ;
GOEHNER, R ;
SMITH, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1914-1918
[7]   IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].
CHU, WK ;
LAU, SS ;
MAYER, JW ;
MULLER, H .
THIN SOLID FILMS, 1975, 25 (02) :393-402
[8]  
LAU CK, 1982, TECH DIG, P714
[9]   ION-BEAM-INDUCED SILICIDATION AND ITS USE IN VERY-LARGE-SCALE INTEGRATION PROCESSING [J].
MAEX, K ;
VANDENHOVE, L ;
DEKEERSMAECKER, RF .
THIN SOLID FILMS, 1986, 140 (01) :149-161
[10]   ELECTRONIC TRANSPORT-PROPERTIES OF TISI2 THIN-FILMS [J].
MALHOTRA, V ;
MARTIN, TL ;
MAHAN, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :10-16