DYNAMIC EFFECTS IN RHEED FROM MBE GROWN GAAS(001) SURFACES

被引：79

作者：

LARSEN, PK

DOBSON, PJ

NEAVE, JH

JOYCE, BA

BOLGER, B

ZHANG, J

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,LONDON SW7 2AZ,ENGLAND

来源：

关键词：

D O I：

10.1016/0039-6028(86)90745-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：176 / 196

页数：21

共 27 条

[21] Miyake S., 1970, Acta Crystallographica, Section A (Crystal Physics, Diffraction, Theoretical and General Crystallography), Va26, P60, DOI 10.1107/S0567739470000074
[22] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
NORTON, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[23] SOME OBSERVATIONS ON GE-GAAS(001) AND GAAS-GE(001) INTERFACES AND FILMS
NEAVE, JH
LARSEN, PK
JOYCE, BA
GOWERS, JP
VANDERVEEN, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 668 - 674
[24] STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY
NEAVE, JH
JOYCE, BA
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) : 387 - 397
[25] THE GAAS(001)-C(4X4) AND (2X4) RECONSTRUCTIONS - A COMPARATIVE PHOTOEMISSION-STUDY
VANDERVEEN, JF
LARSEN, PK
NEAVE, JH
JOYCE, BA
[J]. SOLID STATE COMMUNICATIONS, 1984, 49 (07) : 659 - 662
[26] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
VANHOVE, JM
LENT, CS
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746
[27] [No title captured]