ELECTRONIC-PROPERTIES AT ABRUPT METAL-SI (III) INTERFACES

[1] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4552 - 4559

[2] BOLMONT D, UNPUB

[3] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[4] EFFECT OF SURFACE RECONSTRUCTION ON THE ADSORPTION OF GE ON CLEAN SI(III) [J]. SOLID STATE COMMUNICATIONS, 1983, 46 (09) : 689 - 691

[5] STRUCTURE AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON GE ADSORPTION [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (08) : 1191 - 1193

[6] Chen P., UNPUB

[7] STRUCTURAL MODEL FOR SI(111)-(7X7) [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7782 - 7785

[8] LANDER JJ, 1965, J APPL PHYS, V76, P1706

[9] HIGH-RESOLUTION PHOTOEMISSION YIELD AND SURFACE-STATES IN SEMICONDUCTORS [J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02): : 768 - 780

[10] CONTACTS BETWEEN SIMPLE METALS AND ATOMICALLY CLEAN SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (05): : 655 - 668

[1] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4552 - 4559

[2] BOLMONT D, UNPUB

[3] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[4] EFFECT OF SURFACE RECONSTRUCTION ON THE ADSORPTION OF GE ON CLEAN SI(III) [J]. SOLID STATE COMMUNICATIONS, 1983, 46 (09) : 689 - 691

[5] STRUCTURE AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON GE ADSORPTION [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (08) : 1191 - 1193

[6] Chen P., UNPUB

[7] STRUCTURAL MODEL FOR SI(111)-(7X7) [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7782 - 7785

[8] LANDER JJ, 1965, J APPL PHYS, V76, P1706

[9] HIGH-RESOLUTION PHOTOEMISSION YIELD AND SURFACE-STATES IN SEMICONDUCTORS [J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02): : 768 - 780

[10] CONTACTS BETWEEN SIMPLE METALS AND ATOMICALLY CLEAN SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (05): : 655 - 668