HYDROGEN IN CARBON-DOPED GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：68

作者：

KOZUCH, DM ^{[1
]}

STAVOLA, M ^{[1
]}

PEARTON, SJ ^{[1
]}

ABERNATHY, CR ^{[1
]}

LOPATA, J ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 24期

关键词：

D O I：

10.1063/1.103817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic profiles show that hydrogen is incorporated in GaAs:C that has been grown by metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be about 5% of the carbon concentration for our growth conditions. An infrared absorption study shows that this hydrogen is involved in stable C-H complexes. At the lower C concentrations (<1019 cm-3) the CAs-H complex is the dominant species involving C and H. At higher C concentrations new complexes involving C and H appear.

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页码：2561 / 2563

页数：3

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