INVESTIGATIONS BY SIMS OF THE BULK IMPURITY DIFFUSION OF GE IN SI

被引：57

作者：

DORNER, P

GUST, W

PREDEL, B

ROLL, U

LODDING, A

ODELIUS, H

机构：

[1] MAX PLANCK INST MET FORSCH,D-7000 STUTTGART 1,FED REP GER

[2] INST MET KUNDE,D-7000 STUTTGART 1,FED REP GER

[3] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1984年 / 49卷 / 04期

关键词：

D O I：

10.1080/01418618408236556

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：557 / 571

页数：15

共 15 条

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DORNER, P
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[5] DORNER P, 1984, UNPUB
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[8] HETTICH G, 1979, I PHYS C SER, V46, P500
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[10] DIFFUSION OF GERMANIUM IN SILICON
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