EFFECTS OF MAGNETIC-FIELD GRADIENT ON CRYSTALLOGRAPHIC PROPERTIES IN TIN-DOPED INDIUM OXIDE-FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA SPUTTERING

被引：28

作者：

KUBOTA, E

SHIGESATO, Y

IGARASHI, M

HARANOU, T

SUZUKI, K

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, CTR RES & DEV, ADV FILM TECHNOL INC, TOKAI, IBARAKI 31911, JAPAN

[2] ASAHI GLASS CO LTD, CTR RES & DEV, KANAGAWA KU, YOKOHAMA 221, KANAGAWA, JAPAN

[3] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 9A期

关键词：

ITO; ECR PLASMA; SPUTTERING DEPOSITION; ION BOMBARDMENT; X-RAY DIFFRACTION; STM; SEM; ELECTRICAL PROPERTY;

D O I：

10.1143/JJAP.33.4997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tin-doped indium oxide (ITO) films were deposited by sputtering of sintered oxide targets, employing an electron cyclotron resonance (ECR) microwave plasma system. The effects of Ar ion bombardment on crystallographic and electrical properties of the films were investigated with control of the ion energy by submagnetic field application. It was found that ion bombardment with energies lower than similar to 40 eV enhances crystallization whereas bombardment with higher energies suppresses crystallization. The surface roughness of the film was below 50 Angstrom. The smooth surface formation could be attributed to the microstructural modification arising from ion bombardment.

引用

页码：4997 / 5004

页数：8

共 9 条

[1] EFFECT OF ION-BOMBARDMENT DURING DEPOSITION ON THICK METAL AND CERAMIC DEPOSITS [J].