STRESS IN SILICON AT SI3N4/SIO2 FILM EDGES AND VISCOELASTIC BEHAVIOR OF SIO2-FILMS

被引：47

作者：

ISOMAE, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

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D O I：

10.1063/1.334791

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：216 / 223

页数：8

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