REAL-TIME X-RAY TOPOGRAPHY STUDIES OF THE VISCOELASTIC BEHAVIOR OF SIO2 IN THE SYSTEM SI-SIO2

被引：11

作者：

HARTMANN, W ^{[1
]}

FRANZ, G ^{[1
]}

机构：

[1] SIEMENS AG,UNTERNEHEMENSBEREICH BAUELEMENT,GRUNDLAGENTWICKLUNG,D-8000 MUNICH 80,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期

关键词：

D O I：

10.1063/1.91719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1004 / 1005

页数：2

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共 12 条

[1] X-RAY-DIFFRACTION TOPOGRAPHS OF SILICON CRYSTALS WITH SUPERPOSED OXIDE FILM .3. INTENSITY DISTRIBUTION
ANDO, Y
PATEL, JR
KATO, N
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4405 - 4412
[2] ENHANCED X-RAY DIFFRACTION FROM SUBSTRATE CRYSTALS CONTAINING DISCONTINUOUS SURFACE FILMS
BLECH, IA
MEIERAN, ES
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2913 - &
[3] MEASURING SMALL-AREA SI-SIO-2 INTERFACE STRESS WITH SEM
CONRU, HW
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2079 - 2081
[4] STRESS IN THERMAL SIO2 DURING GROWTH
EERNISSE, FP
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10
[5] FRANZ G, 1980, APPL PHYS LETT, V22, P180
[6] DIRECT SYNCHROTRON X-RAY TOPOGRAPHY OF MOVING DOMAIN-WALLS IN FE-SI SINGLE-CRYSTALS
HARTMANN, W
HAGEN, W
MILTAT, J
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 483 - 485
[7] HARTMANN W, 1979, P NATO ADV STUDY I C
[8] HEARN EW, 1977, ADV XRAY ANAL, V20, P273
[9] DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES AND VISCOELASTIC BEHAVIOR OF SIO2-FILMS
ISOMAE, S
TAMAKI, Y
YAJIMA, A
NANBA, M
MAKI, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1014 - 1019
[10] CORRELATION OF CRYSTAL DEFECTS AND BIPOLAR DEVICE BEHAVIOR
KRANZER, D
LEMME, R
KOLBESEN, BO
MAYER, KR
STRUNK, H
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 803 - 807