CARRIER CONCENTRATION AND ACTIVATION-ENERGY IN HEAVILY DONOR-DOPED SILICON

被引：18

作者：

SCHECHTER, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.338210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：591 / 598

页数：8

共 13 条

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[9] COMMENT ON COMPARISON OF EXPERIMENTAL AND THEORETICAL CARRIER CONCENTRATIONS IN HEAVILY DOPED N-TYPE SILICON [J].

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[10]

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