COMMENT ON COMPARISON OF EXPERIMENTAL AND THEORETICAL CARRIER CONCENTRATIONS IN HEAVILY DOPED N-TYPE SILICON

被引：6

作者：

NEUMARK, GF ^{[1
]}

机构：

[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 08期

关键词：

D O I：

10.1063/1.324169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3618 / 3619

页数：2

共 10 条

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