VISIBLE-LASER ETCHING OF REFRACTORY-METALS BY SURFACE MODIFICATION

被引：4

作者：

ROTHSCHILD, M

SEDLACEK, JHC

EHRLICH, DJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.583624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1400 / 1403

页数：4

共 7 条

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HIGASHI, GS ;

FLEMING, CG .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :766-768

[2] UV LASER PHOTODEPOSITION OF PATTERNED CATALYST FILMS FROM ADSORBATE MIXTURES [J].

EHRLICH, DJ ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :198-200

[3]

EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P696

[4] VISIBLE-LASER PHOTOCHEMICAL ETCHING OF CR, MO, AND W [J].

ROTHSCHILD, M ;

SEDLACEK, JHC ;

BLACK, JG ;

EHRLICH, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :414-418

[5] LASER PHOTOCHEMICAL ETCHING OF MOLYBDENUM AND TUNGSTEN THIN-FILMS BY SURFACE HALOGENATION [J].

ROTHSCHILD, M ;

SEDLACEK, JHC ;

EHRLICH, DJ .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1554-1556

[6] LASER-CHEMICAL MODIFICATION OF NUCLEATION BARRIERS FOR AREA-SELECTIVE THIN-FILM GROWTH [J].

TSAO, JY ;

EHRLICH, DJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :176-187

[7] PATTERNED PHOTONUCLEATION OF CHEMICAL VAPOR-DEPOSITION OF AL BY UV-LASER PHOTODEPOSITION [J].

TSAO, JY ;

EHRLICH, DJ .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :617-619

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