LASER PHOTOCHEMICAL ETCHING OF MOLYBDENUM AND TUNGSTEN THIN-FILMS BY SURFACE HALOGENATION

[1] BLACK JG, 1987, J VAC SCI TECHNO JAN

[2] MULTIPLE PHOTON EXCITED SF6 INTERACTION WITH SILICON SURFACES [J]. JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (02) : 1453 - 1460

[3] DOLAT VS, UNPUB

[4] SUBMICROMETER-LINEWIDTH DOPING AND RELIEF DEFINITION IN SILICON BY LASER-CONTROLLED DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 297 - 299

[5] LASER MICROCHEMICAL TECHNIQUES FOR REVERSIBLE RESTRUCTURING OF GATE-ARRAY PROTOTYPE CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 32 - 35

[6] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[7] EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[8] HIGASHI GS, 1985, 1985 P S FALL M MAT, P55

[9] NON-THERMAL EFFECTS IN LASER-ENHANCED ETCHING OF SILICON BY XEF2 [J]. CHEMICAL PHYSICS LETTERS, 1983, 95 (01) : 5 - 8

[10] Melliar-Smith C. M., 1978, THIN FILM PROCESSES

[1] BLACK JG, 1987, J VAC SCI TECHNO JAN

[2] MULTIPLE PHOTON EXCITED SF6 INTERACTION WITH SILICON SURFACES [J]. JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (02) : 1453 - 1460

[3] DOLAT VS, UNPUB

[4] SUBMICROMETER-LINEWIDTH DOPING AND RELIEF DEFINITION IN SILICON BY LASER-CONTROLLED DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 297 - 299

[5] LASER MICROCHEMICAL TECHNIQUES FOR REVERSIBLE RESTRUCTURING OF GATE-ARRAY PROTOTYPE CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 32 - 35

[6] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[7] EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[8] HIGASHI GS, 1985, 1985 P S FALL M MAT, P55

[9] NON-THERMAL EFFECTS IN LASER-ENHANCED ETCHING OF SILICON BY XEF2 [J]. CHEMICAL PHYSICS LETTERS, 1983, 95 (01) : 5 - 8

[10] Melliar-Smith C. M., 1978, THIN FILM PROCESSES