ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF P-TYPE ZNSE USING PHENYLHYDRAZINE AS THE DOPANT SOURCE

The growth and nitrogen doping of ZnSe by photo-assisted organometallic vapor phase epitaxy (OMVPE) have been investigated using phenylhydrazine (PhHz) as the dopant source. The layers were characterized using photoluminescence (PL), secondary ion mass spectroscopy (SIMS) and capacitance-voltage (C-V) measurements. A high incorporation of nitrogen was observed over the growth temperature range between 350 and 400-degrees-C, even when extremely low dopant partial pressure of 10(-8) atm was used. Typical layers had active acceptor concentrations of (1-2) X 10(15) cm-3. Low temperature growth kinetics with the above dopant source were investigated and a possible model for the nitrogen incorporation is presented.