TRANSPORT-PROPERTIES OF 2-DIMENSIONAL ELECTRON-GAS IN ALGAAS/GAAS SELECTIVELY DOPED HETEROJUNCTIONS WITH EMBEDDED INAS DOTS

被引：103

作者：

SAKAKI, H ^{[1
]}

YUSA, G ^{[1
]}

SOMEYA, T ^{[1
]}

OHNO, Y ^{[1
]}

NODA, T ^{[1
]}

AKIYAMA, H ^{[1
]}

KADOYA, Y ^{[1
]}

NOGE, H ^{[1
]}

机构：

[1] JRDC,QUANTUM TRANSIT PROJECT,MEGURO KU,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 23期

关键词：

D O I：

10.1063/1.115274

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transport properties of two-dimensional electron gas (2DEG) are studied in selectively doped GaAs/n-AlGaAs heterojunctions, in which nanometer-scale InAs dots are embedded in the vicinity of the GaAs channel. When the distance W-d between the InAs dot layer and the channel is reduced from 80 to 15 nm, the mobility mu of electrons at 77 K decreases drastically from 1.1 X 10(5) to 1.1 X 10(3) cm(2)/V a, while the carrier concentration increases from 1.1 X 10(11) to 5.3 X 10(11) cm(-2). Such a reduction of mobility is found only when the average thickness of InAs layer is above the onset level (similar to 1.5 monolayer) for the dot formation. Origins of these changes in mu and N-s are discussed in connection with dot-induced modulations of the electronic potential V(r) in the channel. (C) 1995 American Institute of Physics.

引用

页码：3444 / 3446

页数：3

共 18 条

[1] NANOSCALE INP ISLANDS FOR QUANTUM BOX STRUCTURES BY HYDRIDE VAPOR-PHASE EPITAXY [J].

AHOPELTO, J ;

YAMAGUCHI, AA ;

NISHI, K ;

USUI, A ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (1A-B) :L32-L35

[2] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH [J].

APETZ, R ;

VESCAN, L ;

HARTMANN, A ;

DIEKER, C ;

LUTH, H .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :445-447

[3] REALIZATION OF HIGH MOBILITY IN INVERTED ALXGA1-XAS/GAAS HETEROJUNCTIONS [J].

CHO, NM ;

KIM, DJ ;

MADHUKAR, A ;

NEWMAN, PG ;

SMITH, DD ;

AUCOIN, T ;

IAFRATE, GJ .

APPLIED PHYSICS LETTERS, 1988, 52 (24) :2037-2039

[4] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[5] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[6] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[7] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

[8] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[9] STRUCTURAL AND OPTICAL-PROPERTIES OF SELF-ASSEMBLED INGAAS QUANTUM DOTS [J].

LEONARD, D ;

FAFARD, S ;

POND, K ;

ZHANG, YH ;

MERZ, JL ;

PETROFF, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2516-2520

[10] ELECTRON AND HOLE ENERGY-LEVELS IN INAS SELF-ASSEMBLED QUANTUM DOTS [J].

MEDEIROSRIBEIRO, G ;

LEONARD, D ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1995, 66 (14) :1767-1769

← 1 2 →