LOW-TEMPERATURE SELECTIVE EPITAXY OF III-V COMPOUNDS BY LASER ASSISTED CHEMICAL VAPOR-DEPOSITION

被引：15

作者：

KARAM, NH

LIU, H

YOSHIDA, I

JIANG, BL

BEDAIR, SM

机构：

[1] North Carolina Univ, United States

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

We would like to acknowledge the valuable discussions with Drs. G. Rozgonyi and N. E1-Masry; and the support from National Science Foundation;

D O I：

10.1016/0022-0248(88)90536-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：254 / 258

页数：5

共 17 条

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APPLIED PHYSICS LETTERS, 1988, 52 (14) :1144-1146

[8] LASER DIRECT WRITING OF SINGLE-CRYSTAL III-V COMPOUNDS ON GAAS [J].

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