RATE OF FORMATION OF SILICON DIOXIDE - SEMICONDUCTING RUTHENIUM SILICIDE

被引：12

作者：

DHEURLE, FM

FRAMPTON, RD

IRENE, EA

JIANG, H

PETERSSON, CS

机构：

[1] UNIV N CAROLINA,DEPT CHEM,CHAPEL HILL,NC 27514

[2] ROYAL INST TECHNOL,INST MICROWAVE TECHNOL,S-10044 STOCKHOLM 70,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1170 / 1172

页数：3

共 27 条

[1]

ARIENZO WO, COMMUNICATION

[2] ALTERNATIVE MARKER EXPERIMENT IN FORMATION OF MO AND W SILICIDES [J].

BAGLIN, J ;

DHEURLE, F ;

PETERSSON, S .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :289-290

[3] INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES [J].

BAGLIN, JEE ;

DHEURLE, FM ;

PETERSSON, CS .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1849-1854

[4] CHROMIUM AS A DIFFUSION BARRIER BETWEEN NISI, PD2SI, OR PTSI AND AL [J].

BARTUR, M ;

NICOLET, MA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) :1118-1122

[5] THERMAL-OXIDATION OF NICKEL DISILICIDE [J].

BARTUR, M ;

NICOLET, MA .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :175-177

[6] MARKER EXPERIMENTS FOR DIFFUSION IN THE SILICIDE DURING OXIDATION OF PDSI, PD2SI, COSI2, AND NISI2 FILMS ON [SI] [J].

BARTUR, M ;

NICOLET, MA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5404-5405

[7] SELF-CONSISTENT ENERGY-BANDS AND BONDING OF NISI2 [J].

BYLANDER, DM ;

KLEINMAN, L ;

MEDNICK, K ;

GRISE, WR .

PHYSICAL REVIEW B, 1982, 26 (12) :6379-6383

[8] SILICON SURFACES - METALLIC CHARACTER, OXIDATION AND ADHESION [J].

CROS, A .

JOURNAL DE PHYSIQUE, 1983, 44 (06) :707-711

[9] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[10] THERMAL OXIDATION OF HEAVILY DOPED SILICON [J].

DEAL, BE ;

SKLAR, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :430-+

← 1 2 3 →