STRONG OPTICAL NONLINEARITIES IN QUANTUM WIRES AND DOTS OF POROUS SILICON

被引:11
作者
DNEPROVSKII, V
EEV, A
GUSHINA, N
OKOROKOV, D
PANOV, V
KARAVANSKII, V
MASLOV, A
SOKOLOV, V
DOVIDENKO, E
机构
[1] MOSCOW MV LOMONOSOV STATE UNIV,INST GEN PHYS,MOSCOW 117942,RUSSIA
[2] MOSCOW MV LOMONOSOV STATE UNIV,DEPT GEOL,MOSCOW 119899,RUSSIA
[3] MOSCOW MV LOMONOSOV STATE UNIV,LEBEDEV PHYS INST,MOSCOW 117942,RUSSIA
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 188卷 / 01期
关键词
D O I
10.1002/pssb.2221880127
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The increase of transmission at discrete frequencies (bleaching bands) is observed in porous silicon platelets pumped by picosecond laser pulses. it is attributed to a saturation of optical transitions between the energy levels of electrons and holes spatially confined within quasi-zero-dimensional (quantum dots) and quasi-one-dimensional (quantum wires) nanostructures. The results of independent measurements using transmission and reflection electron and scanning tunneling microscopy have confirmed the existence of quantum dots and wires of corresponding size. A considerable slowing of energy relaxation from upper to lower levels of size quantization compared with intraband relaxation in the bulk has been observed in the cooled (80 K) platelets of porous silicon.
引用
收藏
页码:297 / 306
页数:10
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