INCORPORATION OF SILICON DURING MBE GROWTH OF GAAS ON (111)A SUBSTRATES

被引：14

作者：

FAHY, MR ^{[1
]}

NEAVE, JH ^{[1
]}

ASHWIN, MJ ^{[1
]}

MURRAY, R ^{[1
]}

NEWMAN, RC ^{[1
]}

JOYCE, BA ^{[1
]}

KADOYA, Y ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] JRDC,QUANTUM WAVE PROJECT,MEGURO KU,TOKYO 153,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90750-Q

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Si-doped GaAs has been grown on (111)A and (111)A vicinal GaAs substrates and carrier concentrations measured for a range of Si fluxes and growth temperatures. The use of As2 as opposed to As4 has been examined. These results are discussed with respect to the growth mechanisms. Photoluminescence measurements have been made and compared with growth on an (001) substrate. The nature of the lattice site of incorporated Si is confirmed using local vibrational mode measurements.

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页码：871 / 876

页数：6

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