PHOTOASSISTED GROWTH OF GALLIUM NITRIDE BY GAS SOURCE MOLECULAR-BEAM EPITAXY

Thin films of GaN have been achieved via gas source molecular beam epitaxy with and without substrate illumination from a 500 W Hg arc lamp. X-ray photoelectron spectroscopy showed a nominally stoichiometric GaN film without contaminants regardless of illumination. Illumination and Ga cell temperature changed the texture of the polycrystalline GaN from (0001) parallel-to (100) to (0001) parallel-to (111) and back again. Near single crystal films were deposited with an orientation relationship of omega-GaN (0001) parallel-to beta-SiC (100) and (1010BAR) parallel-to (011BAR). Resulting films were characterized by scanning electron microscopy as well as x-ray and electron diffraction.