IMPROVED LPE GROWTH METHOD FOR GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES

被引：7

作者：

NISHITANI, Y ^{[1
]}

AKITA, K ^{[1
]}

KOMIYA, S ^{[1
]}

NAKAJIMA, K ^{[1
]}

YAMAGUCHI, A ^{[1
]}

UEDA, O ^{[1
]}

KOTANI, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 35卷 / 03期

关键词：

D O I：

10.1016/0022-0248(76)90185-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：279 / 284

页数：6

共 15 条

[1]

Alferov Zh. I., 1975, Kristall und Technik, V10, P103, DOI 10.1002/crat.19750100205

[2]

ANDRE E, 1970, Patent No. 1600341

[3] NEAR-EQUILIBRIUM LPE GROWTH OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES [J].

DAWSON, LR .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :86-96

[4]

Frank G., 1973, Acta Electronica, V16, P237

[5] DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].

GRABMAIER, JG ;

WATSON, CB .

PHYSICA STATUS SOLIDI, 1969, 32 (01) :K13-+

[6]

KOMIYA S, TO BE PUBLISHED

[7] REDUCTION OF AL CONTAMINATION IN GAAS LAYER OF LPE-GROWN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

KOPF, L ;

SUMSKI, S .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (03) :365-366

[8]

LOCKWOOD HF, 1974, J CRYST GROWTH, V27, P97

[9] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES [J].

MILLER, BI ;

CAPIK, RJ ;

HAYASHI, I ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2817-&

[10] EFFECTS OF COMPOSITION PROFILE ON CHARACTERISTICS OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS [J].

NAKASHIMA, H ;

CHINONE, N ;

TAGUCHI, Y ;

NAKADA, O .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2688-2689

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