CURRENT APPROACHES TO PN JUNCTIONS IN WIDER BAND-GAP II-VI SEMICONDUCTORS

被引：12

作者：

MCCALDIN, JO

机构：

[1] California Institute of Technology, Pasadena

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.576943

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Long-standing problems to make junctions in wider band gap semiconductors, especially II-VIs, are being restudied today by new low-temperature epitaxial growth methods, which may lead to current-injecting devices suited to light emission. This paper reviews various approaches briefly, with particular emphasis on heterojunctions and methods to control dopants. A few of the many possible heterojunctions are favored by small offset barriers, but are not without other problems. New dopants, besides the much-studied Li, are being introduced in new ways, in the effort to attain reproducibility and stability. © 1990, American Vacuum Society. All rights reserved.

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页码：1188 / 1193

页数：6

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