PULSED EXCIMER (KRF) LASER MELTING OF AMORPHOUS AND CRYSTALLINE SILICON LAYERS

被引：61

作者：

NARAYAN, J

WHITE, CW

AZIZ, MJ

STRITZKER, B

WALTHUIS, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：564 / 567

页数：4

共 11 条

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[4]

Narayan J., 1984, Materials Letters, V2, P211, DOI 10.1016/0167-577X(84)90026-0

[5] PHASE-TRANSFORMATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER IRRADIATION OF AMORPHOUS-SILICON LAYERS [J].

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AZIZ, MJ .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1821-1830

[6] PULSED LASER MELTING OF AMORPHOUS-SILICON LAYERS [J].

NARAYAN, J ;

WHITE, CW .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :35-37

[7]

THOMPSON MC, UNPUB PHYS REV LETT

[8]

THOMPSON MO, 1984, THESIS CORNELL U

[9] COMPUTER-SIMULATION OF HIGH-SPEED MELTING OF AMORPHOUS-SILICON [J].

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CHEW, NG .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :669-671

[10] BULK NUCLEATION AND AMORPHOUS PHASE FORMATION IN HIGHLY UNDERCOOLED MOLTEN SILICON [J].

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APPLIED PHYSICS LETTERS, 1984, 44 (08) :770-772

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