HIGHLY RELIABLE AND MODE-STABILIZED OPERATION IN V-CHANNELED SUBSTRATE INNER STRIPE LASERS ON P-GAAS SUBSTRATE EMITTING IN THE VISIBLE WAVELENGTH REGION

[21] CHANNELED-SUBSTRATE-PLANAR STRUCTURE ALXGA1-XAS LASERS - ANALYTICAL WAVEGUIDE STUDY [J]. APPLIED OPTICS, 1978, 17 (20): : 3264 - 3267

[22] DOPING EFFECTS ON RAKE-LINE FORMATION IN LPE GROWTH OF ALXGA1-XAS DH LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5970 - 5977

[23] LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4644 - 4648

[24] BURIED-HETEROSTRUCTURE ALGAAS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 205 - 215

[25] EFFECT OF WAVEGUIDING PROPERTIES ON THE AXIAL MODE COMPETITION IN STRIPE-GEOMETRY SEMICONDUCTOR-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 706 - 713

[26] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) : 451 - 469

[27] VERY LOW THRESHOLD VISIBLE TS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 776 - 780

[28] TELLURIUM-INDUCED DEFECTS IN LPE AL0.36GA0.64AS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 173 - 180

[29] Yamada M., 1981, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE64, P770

[30] CONDITION OF SINGLE LONGITUDINAL MODE-OPERATION IN INJECTION-LASERS WITH INDEX-GUIDING STRUCTURE [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 743 - 749

[21] CHANNELED-SUBSTRATE-PLANAR STRUCTURE ALXGA1-XAS LASERS - ANALYTICAL WAVEGUIDE STUDY [J]. APPLIED OPTICS, 1978, 17 (20): : 3264 - 3267

[22] DOPING EFFECTS ON RAKE-LINE FORMATION IN LPE GROWTH OF ALXGA1-XAS DH LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5970 - 5977

[23] LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4644 - 4648

[24] BURIED-HETEROSTRUCTURE ALGAAS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 205 - 215

[25] EFFECT OF WAVEGUIDING PROPERTIES ON THE AXIAL MODE COMPETITION IN STRIPE-GEOMETRY SEMICONDUCTOR-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 706 - 713

[26] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) : 451 - 469

[27] VERY LOW THRESHOLD VISIBLE TS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 776 - 780

[28] TELLURIUM-INDUCED DEFECTS IN LPE AL0.36GA0.64AS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 173 - 180

[29] Yamada M., 1981, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE64, P770

[30] CONDITION OF SINGLE LONGITUDINAL MODE-OPERATION IN INJECTION-LASERS WITH INDEX-GUIDING STRUCTURE [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 743 - 749