PROPOSED PLANAR-TYPE AMORPHOUS-SILICON MOS-TRANSISTORS

被引：6

作者：

UCHIDA, Y

MATSUMURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 10期

关键词：

D O I：

10.1143/JJAP.24.L812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L812 / L814

页数：3

共 13 条

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[6] CURRENT PATH IN AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J].

MATSUMURA, M ;

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UCHIDA, Y .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :519-522

[7] SELF-ALIGNMENT A-SI FET BY USING A LIFT-OFF TECHNIQUE [J].

OKADA, H ;

UCHIDA, Y ;

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MATSUMURA, M .

ELECTRONICS LETTERS, 1985, 21 (15) :633-634

[8]

OKUBO Y, 1982, SID 82 DIGEST, P40

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